Award for Prof. Norbert Koch

At the IUPAC NMS-XIII conference in Nanjing, Norbert Koch, Professor at the Department of Physics, member of IRIS Adlershof and head of a joint research group at the Helmholtz-Centre Berlin for materials and energy, has been awarded the "Distinguished Award 2017 for Novel Materials and their Synthesis "of IUPAC (International Union of Pure and Applied Chemistry) and of the Conference Committee. Norbert Koch received the award for his research on hybrid electronic materials and their interfaces in electronic and optoelectronic components.


  • An international team of scientists has improved greatly the stability of organic-inorganic lead halide perovskites. These materials have enormous potential for photovoltaic applications but still suffer from comparably moderate device lifetime. The scientists, led by researchers from the EPFL, Lausanne, Switzerland, incorporated a large organic cation – guanidinium - into the perovskite crystal structure, in part replacing the traditionally used methylammonium and formamidinium cations. Overall, the new material delivered average power conversion efficiencies over 19%, and stabilized performance for 1,000 h under continuous light illumination. This is a fundamental step within the perovskite field. DOI:10.1038/s41560-017-0054-3


  • Dr. Raphael Schlesinger’s dissertation released by Springer Theses
  • The dissertation of Dr. Raphael Schlesinger was selected to be published in Springer Theses, a dedicated book series to recognize outstanding doctoral research. His work, conceived and performed within the SFB951 at the Institut für Physik of Humboldt-Universität zu Berlin, was supervised by Prof. Norbert Koch, also member of IRIS Adlershof. The thesis unravels fundamental mechanisms governing hybrid inorganic organic energy-level alignment and its purposeful manipulation.These insights pave the way towards new technological control and enable usage of hybrid materials and interfaces in future devices and applications.


  • GLAD improves memories : Our researchers have used a technique called glancing angle deposition (GLAD) to fabricate non-volatile memory devices that are smaller than 100nm2. When integrated into the appropriate architectures, these devices have a memory density of more than 1 GB/cm2. They could be used in high-density, high-speed and low-power memories of the future.

    DOI:Nano Letters 7(2) 2017 1149


  • Molecular electrical doping of organic semiconductors : fundamental mechanisms and emerging dopant design rules
    I. Salzmann, et al., Acc. Chem. Res. 49 (2016) 370

  • Charge-transfer crystallites as molecular electrical dopants
    H. Méndez, et al., Nature Commun. 6 (2015) 8560

  • Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning
    R. Schlesinger, et al., Nature Commun. 6 (2015) 6754

  • Probing the energy levels in hole-doped molecular semiconductors
    S. Winkler, et al., Mat. Horiz. 2 (2015) 427
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